Low power design has become a cornerstone of modern integrated circuit development, driven by energy efficiency demands and the challenges of scaling in nanometre technologies. Innovations in ...
SANTA CLARA, Calif., Sept. 24, 2024 (GLOBE NEWSWIRE) -- Silvaco Group, Inc. (SVCO) (Nasdaq: SVCO, “Silvaco” or the “Company”), a provider of TCAD, EDA software, and SIP solutions that enable ...
SAN FRANCISCO — Even before Gordon Moore delivers his keynote to the 50th annual International Solid State Circuits Conference (ISSCC) here, technologists were debating the merits of the IC ...
The critical role of mechanical stress in FinFET performance and the importance of pitch control to minimize variability and optimize device parametric targets.
Scaling CMOS to finer dimensions is like climbing an increasingly steep mountain. The peaks ahead are scary. Already, the achingly difficult integration of new materials and device structures is ...
November 9, 2013. Imec announced that it has successfully demonstrated the first III-V compound semiconductor FinFET devices integrated epitaxially on 300-mm silicon wafers, through a unique silicon ...
Hsinchu, Taiwan – Attopsemi, a pioneering provider of innovative One-Time Programmable (OTP) IP solutions, today announced a significant technological leap: its proprietary I-fuse® technology has ...
Imec, perhaps the world's top semiconductor research center, has created the first monolithic III-V CMOS transistors on 300mm silicon wafers. With current silicon-based transistors hitting a wall at ...
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