EDN

Three-phase half-bridge gate driver from Diodes Incorporated simplifies BLDC and PMSM motor drive

The DGD2136 introduced by Diodes Incorporated is a fully integrated 3-phase gate driver IC intended for driving N-channel MOSFETs or IGBTs in a half-bridge configuration. With its floating high-side ...
Electronic Design

The eGaN FET-Silicon Power Shoot-Out: 2: Drivers, Layout

Find a downloadable version of this story in pdf format at the end of the story. To determine the gate drive circuit requirements, and how they differ from traditional silicon MOSFET drivers, it is ...
Electronic Design

Gate Drivers Keep Up with GaN’s Fast Switching Speed

Check out our coverage of APEC 2024. This article is part of the TechXchange: Gallium Nitride (GaN). The GaN FET is becoming widely preferred in power systems such as high-frequency DC-DC converters.
Semiconductor Engineering

Choosing A Gate Driver For Silicon Carbide MOSFETs

If you are going to use a silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in your next development, you will ask yourself: how do I develop the best gate driver for it ...
EDN

MOSFET drivers for motor drives: Start with your motor’s specs

Engineers often use a gate driver or “pre-driver” IC along with N-channel power MOSFETs to provide the high current needed to drive motors. It’s important to account for all the design considerations ...
New Electronics

ST’s latest half-bridge gate drivers simplify designs using GaN in low-voltage systems

These devices have been tailored for systems powered from industrial or telecom bus voltages, 72V battery systems, and 110V AC line-powered equipment. Rated for maximum rail voltage of 220V, the ...