Abstract: This paper introduces a novel and simple etching technique that utilizes a mixture of sulfuric acid (H2 SO4) and hydrofluoric acid (HF). This method selectively etches silicon dioxide (SiO2) ...
Abstract: Improving the bowing profile and LCDU in HAR etching is challenging due to ion sputtering, insufficient sidewall protection, and uneven polymer deposition. To address these challenges, we ...
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